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2SB1322A PDF预览

2SB1322A

更新时间: 2024-11-20 12:54:35
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 134K
描述
TRANSISTOR (PNP)

2SB1322A 数据手册

  
RoHS  
2SB1322A  
2SB1322A TRANSISTOR (PNP)  
TO-92  
FEATURES  
Power dissipation  
1. EMITTER  
2. COLLECTOR  
3. BASE  
PCM:  
1
W (Tamb=25)  
Collector current  
ICM:  
-1  
A
V
Collector-base voltage  
1 2 3  
V(BR)CBO  
:
-60  
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=-10µA, IE=0  
Ic=-2mA, IB=0  
MIN  
-60  
-50  
-5  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
IE=-10µA, IC=0  
µA  
µA  
VCB=-20V, IE=0  
-0.1  
-0.1  
340  
IEBO  
Emitter cut-off current  
VEB=-5V, IC=0  
hFE(1)  
VCE=-10V, IC=-0.5A  
85  
50  
DC current gain  
hFE(2)  
VCE=-5V, IC=-1A  
VCE(sat)  
VBE(sat)  
fT  
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
IC=-0.5A, IB=-50mA  
IC=-0.5A, IB=-50mA  
VCE=-10V, IC=-50mA  
CB=-10V, IE=0, f=1MHz  
-0.4  
-1.2  
MHz  
pF  
200  
Cob  
30  
Collector output capacitance  
V
CLASSIFICATION OF hFE(1)  
WEJ ELECTRONIC CO.,LTD  
Rank  
Q
R
S
Range  
Marking  
85-170  
120-240  
170-340  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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