Datasheet > 2SB1325

2SB1325

更新时间： 2024-11-20 06:24:19

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
2页	55K
描述
PNP Epitaxial Planar Silicon Transistors

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中文翻译

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数据手册

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2SB1325 数据手册

SMD Type

Transistors

PNP Epitaxial Planar Silicon Transistors

2SB1325

Features

Low saturation voltage.

Contains diode between collector and emitter.

Contains bias resistance between base and emitter.

Large current capacity.

Small-sized package making it easy to provide highdensity,

small-sized hybrid ICs.

Electrical Connection

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-25

Collector-emitter voltage

Emitter-base voltage

Collector current

-20

-6

-4

-6

Collector current (pulse)

Collector dissipation

Jumction temperature

Storage temperature

I^CP

P^C*

T^j

1.5

150

Tstg

-55 to +150

* Mounted on ceramic board (250mm²X0.8mm)

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