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2SB1326 PDF预览

2SB1326

更新时间: 2024-11-19 22:52:39
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
4页 157K
描述
Low Frequency Transistor(-20V,-5A)

2SB1326 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.55最大集电极电流 (IC):5 A
配置:Single最小直流电流增益 (hFE):82
JESD-609代码:e1极性/信道类型:PNP
最大功率耗散 (Abs):1 W子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
Base Number Matches:1

2SB1326 数据手册

 浏览型号2SB1326的Datasheet PDF文件第2页浏览型号2SB1326的Datasheet PDF文件第3页浏览型号2SB1326的Datasheet PDF文件第4页 
Transistors  
Low Frequency Transistor  
(*20V,*5A)  
2SB1386 / 2SB1412 / 2SB1326 / 2SB1436  
FFeatures  
FExternal dimensions (Units: mm)  
1) Low VCE(sat).  
VCE(sat) = *0.35V (Typ.)  
(IC / IB = *4A / *0.1A)  
2) Excellent DC current gain charac-  
teristics.  
3) Complements the 2SD2098 /  
2SD2118 / 2SD2097 / 2SD2166.  
FStructure  
Epitaxial planar type  
PNP silicon transistor  
(96-141-B204)  
211  

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