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2SB1323 PDF预览

2SB1323

更新时间: 2024-10-14 06:24:19
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管开关
页数 文件大小 规格书
2页 55K
描述
PNP Epitaxial Planar Silicon Transistors

2SB1323 数据手册

 浏览型号2SB1323的Datasheet PDF文件第2页 
SMD Type  
Transistors  
PNP Epitaxial Planar Silicon Transistors  
2SB1323  
Features  
Low saturation voltage.  
Contains diode between collector and emitter.  
Contains bias resistance between collector and emitter.  
Large current capacity.  
Small-sized package making it easy to provide highdensity,  
small-sized hybrid ICs.  
Electrical Connection  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
-40  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
-30  
V
-6  
V
-3  
-5  
A
Collector current (pulse)  
Collector dissipation  
Jumction temperature  
Storage temperature  
ICP  
A
PC *  
Tj  
1.5  
W
150  
Tstg  
-55 to +150  
* Mounted on ceramic board 250mm2X0.8mm  
1
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