生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.46 |
Is Samacsys: | N | 其他特性: | BUILT IN BIAS RESISTOR |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 30 V | 配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 50 | JESD-30 代码: | R-PSSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 功耗环境最大值: | 1.5 W |
最大功率耗散 (Abs): | 1.5 W | 认证状态: | Not Qualified |
子类别: | BIP General Purpose Small Signal | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1325 | SANYO |
获取价格 |
Compact Motor Driver Applications | |
2SB1325 | KEXIN |
获取价格 |
PNP Epitaxial Planar Silicon Transistors | |
2SB1325 | TYSEMI |
获取价格 |
Low saturation voltage. Contains diode between collector and emitter. | |
2SB1326 | ROHM |
获取价格 |
Low Frequency Transistor(-20V,-5A) | |
2SB1326TV2 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1326TV2/P | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1326TV2/PQ | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1326TV2/PR | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon | |
2SB1326TV2/QR | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1326TV2/R | ROHM |
获取价格 |
5000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, ATV, 3 PIN |