Datasheet > 2SB1322AR

2SB1322AR

更新时间： 2024-11-19 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	65K
描述
TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 1A I(C) \| SIP

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中文翻译

获取价格

数据手册

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2SB1322AR 数据手册

Transistor

2SB1322A

Silicon PNP epitaxial planer type

For low-frequency power amplification

Complementary to 2SD1994A

Unit: mm

6.9±0.1

4.0

2.5±0.1

0.7

(0.8)

Features

Allowing supply with the radial taping.

ꢀ

0.65 max.

ꢀ

Absolute Maximum Ratings (Ta=25˚C)

ꢀ

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

+0.10

0.45

–0.05

1.05±0.05

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–60

2.5±0.5

–50

–5

–1.5

Note: In addition to the

lead type shown in

the upper figure, the

type as shown in

1:Emitter

2:Collector

3:Base

I_C

–1

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

MT-2-A1 Package

the lower figure is

also available.

T_j

150

T_stg

–55 ~ +150

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

1.2±0.1

0.65

max.

0.1

0.45_–0.05

(HW type)

Electrical Characteristics (Ta=25˚C)

ꢀ

Parameter

Symbol

I_CBO

Conditions

_CB= –20V, I_E= 0

min

typ

max

Unit

µA

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

– 0.1

V_CBO

V_CEO

V_EBO

I_C= –10µA, I_E= 0

–60

–50

–5

I_C= –2mA, I_B= 0

I_E= –10µA, I_C= 0

h_FE1

h_FE2

V_CE= –10V, I_C= –500mA^*2

V_CE= –5V, I_C= –1mA^*2

I_C= –500mA, I_B= –50mA^*2

V_CB= –10V, I_E= 50mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

340

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

– 0.4

–1.2

Transition frequency

f_T

200

MHz

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

85 ~ 170

120 ~ 240

170 ~ 340

254

12 3 4

中文翻译

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与2SB1322AR相关器件

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2SB1322AS	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 1A I(C) \| SIP
2SB1322A-SZ	PANASONIC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
2SB1322S	PANASONIC	获取价格	暂无描述
2SB1323	TYSEMI	获取价格	Low saturation voltage. Contains diode between collector and emitter.
2SB1323	SANYO	获取价格	Compact Motor Driver Applications
2SB1323	KEXIN	获取价格	PNP Epitaxial Planar Silicon Transistors
2SB1324	TYSEMI	获取价格	Low saturation voltage. Contains diode between collector and emitter.
2SB1324	KEXIN	获取价格	PNP Epitaxial Planar Silicon Transistors
2SB1324	SANYO	获取价格	Compact Motor Driver Applications
2SB1325	SANYO	获取价格	Compact Motor Driver Applications