2SB1322A

更新时间： 2024-11-19 22:52:39

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	72K
描述
Silicon PNP epitaxial planer type(For low-frequency power amplification)

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2SB1322A 数据手册

Transistors

2SB1322A

Silicon PNP epitaxial planer type

Unit: mm

2.5 0.1

1.05

0.05

For low-frequency power amplification

Complementary to 2SD1994A

6.9 0.1

4.0

(1.45)

0.8

0.7

I Features

0.65 max.

• Allowing supply with the radial taping

0.45⁺−⁰0.^.0¹5

I Absolute Maximum Ratings T_a= 25°C

2.5 0.5 2.5 0.5

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

−60

−50

Note) In addition to the

lead type shown in

the upper figure,

the type as shown

in the lower figure

is also available.

1: Emitter

2: Collector

3: Base

−5

−1.5

MT2 Type Package

I_C

−1

Collector power dissipation ^*

Junction temperature

Storage temperature

P_C

°C

T_j

150

T_stg

−55 to +150

1.2 0.1

Note) : Printed circuit board: Copper foil area of 1 cm²or more, and the

0.65

max.

board thickness of 1.7 mm for the collector portion

0.1

0.45_−0.05

(HW Type)

I Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

I_CBO

Conditions

V_CB= −20 V, I_E= 0

Min

Typ

Max

Unit

µA

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

− 0.1

V_CBO

V_CEO

V_EBO

I_C= −10 µA, I_E= 0

−60

−50

−5

I_C= −2 mA, I_B= 0

I_E= −10 µA, I_C= 0

Forward current transfer ratio ^*

h_FE1

h_FE2

V_CE= −10 V, I_C= −500 mA

V_CE= −5 V, I_C= −1 A

340

Collector to emitter saturation voltage ^*

Base to emitter saturation voltage ^*

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

I_C= −500 mA, I_B= −50 mA

V_CB= −10 V, I_E= 50 mA, f = 200 MHz

V_CB= −10 V, I_E= 0, f = 1 MHz

− 0.4

−1.2

200

MHz

Collector output capacitance

C_ob

Note) 1: Pulse measurement

2: Rank classification

Rank

No-rank

h_FE1

85 to 170

120 to 240

170 to 340

85 to 340

Product of no-rank is not classified and have no indication for rank.

12 3

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与2SB1322A相关器件

型号	品牌	获取价格	描述	数据表
2SB1322A-HW	PANASONIC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
2SB1322AQ	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 1A I(C) \| SIP
2SB1322AR	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 1A I(C) \| SIP
2SB1322AS	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 1A I(C) \| SIP
2SB1322A-SZ	PANASONIC	获取价格	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
2SB1322S	PANASONIC	获取价格	暂无描述
2SB1323	TYSEMI	获取价格	Low saturation voltage. Contains diode between collector and emitter.
2SB1323	SANYO	获取价格	Compact Motor Driver Applications
2SB1323	KEXIN	获取价格	PNP Epitaxial Planar Silicon Transistors
2SB1324	TYSEMI	获取价格	Low saturation voltage. Contains diode between collector and emitter.

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