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2SB1322A PDF预览

2SB1322A

更新时间: 2024-10-13 22:52:39
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 72K
描述
Silicon PNP epitaxial planer type(For low-frequency power amplification)

2SB1322A 数据手册

 浏览型号2SB1322A的Datasheet PDF文件第2页浏览型号2SB1322A的Datasheet PDF文件第3页 
Transistors  
2SB1322A  
Silicon PNP epitaxial planer type  
Unit: mm  
2.5 0.1  
1.05  
0.05  
For low-frequency power amplification  
Complementary to 2SD1994A  
6.9 0.1  
4.0  
(1.45)  
0.8  
0.7  
I Features  
0.65 max.  
Allowing supply with the radial taping  
0.45+00..015  
I Absolute Maximum Ratings Ta = 25°C  
2.5 0.5 2.5 0.5  
2
1
3
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Rating  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
60  
50  
V
Note) In addition to the  
lead type shown in  
the upper figure,  
the type as shown  
in the lower figure  
is also available.  
1: Emitter  
2: Collector  
3: Base  
5  
V
1.5  
A
MT2 Type Package  
IC  
1  
A
Collector power dissipation *  
Junction temperature  
Storage temperature  
PC  
1
W
°C  
°C  
Tj  
150  
Tstg  
55 to +150  
1.2 0.1  
Note) : Printed circuit board: Copper foil area of 1 cm2 or more, and the  
*
0.65  
max.  
board thickness of 1.7 mm for the collector portion  
+
0.1  
0.450.05  
(HW Type)  
I Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
ICBO  
Conditions  
VCB = −20 V, IE = 0  
Min  
Typ  
Max  
Unit  
µA  
V
Collector cutoff current  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
0.1  
VCBO  
VCEO  
VEBO  
IC = −10 µA, IE = 0  
60  
50  
5  
IC = −2 mA, IB = 0  
V
IE = −10 µA, IC = 0  
V
1
2
*
Forward current transfer ratio *  
hFE1  
hFE2  
VCE = −10 V, IC = −500 mA  
VCE = −5 V, IC = −1 A  
85  
340  
50  
1
Collector to emitter saturation voltage *  
Base to emitter saturation voltage *  
Transition frequency  
VCE(sat)  
VBE(sat)  
fT  
IC = −500 mA, IB = −50 mA  
IC = −500 mA, IB = −50 mA  
VCB = −10 V, IE = 50 mA, f = 200 MHz  
VCB = −10 V, IE = 0, f = 1 MHz  
0.4  
1.2  
V
V
1
200  
20  
MHz  
pF  
Collector output capacitance  
Cob  
30  
Note) 1: Pulse measurement  
*
2: Rank classification  
*
Rank  
Q
R
S
No-rank  
hFE1  
85 to 170  
120 to 240  
170 to 340  
85 to 340  
Product of no-rank is not classified and have no indication for rank.  
1

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