Datasheet > 2SB1321AS

2SB1321AS

更新时间： 2024-11-19 23:20:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
4页	81K
描述
TRANSISTOR \| BJT \| PNP \| 50V V(BR)CEO \| 500MA I(C) \| SIP

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中文翻译

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数据手册

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2SB1321AS 数据手册

Transistors

2SB1321A

Silicon PNP epitaxial planer type

Unit: mm

6.9 0.1

4.0

2.5 0.1

1.05

0.05

For general amplification

(1.45)

0.8

0.7

Complementary to 2SD1992A

I Features

0.65 max.

• Large collector power dissipation P_C(600 mW)

• Allowing supply with the radial taping

0.45⁺−⁰0.^.0¹5

2.5 0.5 2.5 0.5

I Absolute Maximum Ratings T_a= 25°C

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

−60

Unit

Note) In addition to the

lead type shown in

the upper figure,

the type as shown

in the lower figure

is also available.

1: Emitter

2: Collector

3: Base

−50

−7

MT1 Type Package

−1

I_C

−500

600

°C

Collector power dissipation

Junction temperature

Storage temperature

P_C

T_j

150

1.2 0.1

T_stg

−55 to +150

0.65

max.

0.1

0.45_−0.05

(HW Type)

I Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

I_CBO

Conditions

Min

Typ

Max

− 0.1

−1

Unit

µA

Collector cutoff current

V_CB= −20 V, I_E= 0

I_CEO

V_CE= −20 V, I_B= 0

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CBO

V_CEO

V_EBO

I_C= −10 µA, I_E= 0

−60

−50

−7

I_C= −2 mA, I_B= 0

I_E= −10 µA, I_C= 0

Forward current transfer ratio ^*

h_FE1

h_FE2

V_CE= −10 V, I_C= −10 mA

V_CE= −10 V, I_C= −500 mA

I_C= −300 mA, I_B= −30 mA

V_CB= −10 V, I_E= 10 mA, f = 200 MHz

V_CB= −10 V, I_E= 0, f = 1 MHz

340

Collector to emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

− 0.35 − 0.6

MHz

200

Collector output capacitance

C_ob

Note) 1: Pulse measurement

2: Rank classification

Rank

No-rank

h_FE1

85 to 170

120 to 240

170 to 340

85 to 340

Product of no-rank is not classified and have no indication for rank.

12 3 4

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