是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.85 |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 25 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.6 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1321A | PANASONIC |
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Silicon PNP epitaxial planer type | |
2SB1321A-HW | PANASONIC |
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Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1321AQ | ETC |
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TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | SIP | |
2SB1321AR | ETC |
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TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | SIP | |
2SB1321AS | ETC |
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TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | SIP | |
2SB1321A-SZ | PANASONIC |
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Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, | |
2SB1322A | PANASONIC |
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Silicon PNP epitaxial planer type(For low-frequency power amplification) | |
2SB1322A | SECOS |
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PNP Plastic Encapsulated Transistor | |
2SB1322A | TRSYS |
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Plastic-Encapsulated Transistors | |
2SB1322A | WINNERJOIN |
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TRANSISTOR (PNP) |