Datasheet > 2SB1258_2014

2SB1258_2014

更新时间： 2024-11-22 01:18:55

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	153K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB1258_2014 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1258

DESCRIPTION

·With TO-220F package

·Complement to type 2SD1785

·High DC current gain

·DARLINGTON

APPLICATIONS

·Driver for solenoid ,relay and motor

and general purpose

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

-100

-6

UNIT

Open emitter

Open base

Open collector

-6

I_CM

Collector current-peak

Base current

-10

I_B

-1

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-55~150

T_stg

12 3

中文翻译

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