Datasheet > 2SB1260_15

2SB1260_15

更新时间： 2024-11-18 01:23:59

品牌	Logo	应用领域
永而佳 - WINNERJOIN		/
页数	文件大小	规格书
1页	131K
描述
TRANSISTOR (PNP)

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中文翻译

获取价格

数据手册

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2SB1260_15 数据手册

RoHS

2SB1260

TRANSISTOR (PNP)

SOT-89

FEATURES

1. BASE

Power dissipation

P_CM:

Collector current

I_CM:

0.5

W (Tamb=25℃)

2. COLLECTOR

3. EMITTER

-1

Collector-base voltage

V_(BR)CBO

-80

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-50µA , I_E=0

MIN

-80

-5

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= -1mA , I_B=0

I_E=-50µA, I_C=0

V_CB=-60 V , I_E=0

V_EB=-4 V , I_C=0

-1

µA

I_EBO

Emitter cut-off current

h_FE

DC current gain

_CE=-3V, I_C= -0.1A

390

-0.4

V_CE(sat)

I_C=-500 mA, I_B= -50mA

V_CE= -5V, I_C=- 50mA

Collector-emitter saturation voltage

MHz

Transition frequency

f _T

f = 30MHz

CLASSIFICATION OF h^FE

Rank

Range

82-180

120-270

180-390

WEJ ELECTRONIC CO.,LTD

Marking

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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