Datasheet > 2SB1260I

2SB1260I

更新时间： 2024-09-14 17:00:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	260K
描述
80V,1A,Medium Power PNP Bipolar Transistor

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2SB1260I 数据手册

Product specification

Power Transistor(-80V,-1A)

2SB1260

FEATURES

Lead-free



High breakdown voltage and

high current.

BV_CEO=-80V,I_C=-1A

Good h_FEVLinearity.

Low V_CE(sat).



Complements the 2SD1898.

APPLICATIONS

2SB1260I

TO-251

2SB1260D

TO-252



Epitaxial planar type PNP silicon transistor

Ordering Information

Part Number

Package

Shipping

Marking Code

2SB1260I□

TO-251

80/Tube

B1260I

2SB1260D□

TO-252

80/Tube or2500/Tape Reel

B1260D

□: none is for Lead Free package;

“G” is for Halogen Free package.

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Unit

V_CBO

V_CEO

V_EBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-80

-5

Collector Current –DC

-Pulse

-1

-2

I_C

1.0

P_C

Collector power Dissipation

1.3 Note1

T_j

Junction Temperature

Storage Temperature

150

℃

T_stg

-55 to +150

℃

Note1:Mounted on ceramic substrate(250mm²*0.8t)

STM0270A

www.gmesemi.com

12 3 4 5

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