Datasheet > 2SB1260_12

2SB1260_12

更新时间： 2024-11-17 07:30:03

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	149K
描述
Power Transistor

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中文翻译

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数据手册

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2SB1260_12 数据手册

Power Transistor (−80V, −1A)

2SB1260 / 2SB1181

Features

Dimensions (Unit : mm)

1) Hight breakdown voltage and high current.

BV^CEO= −80V, IC = −1A

2) Good h^FElinearty.

3) Low V^CE(sat).

4) Complements the 2SD1898 / 2SD1733.

2SB1260

2SB1181

0.2

2.3

6.5 0.2

0.2

C0.5

5.1

+0.2

4.5

0.5 0.1

1.5

1.6 0.1

0.65 0.1

0.75

(1) (2) (3)

0.9

+0.1

0.4

0.55 0.1

1.0 0.2

0.5 0.1

3.0 0.2

2.3 0.2 2.3 0.2

0.4 0.1

1.5 0.1

0.4 0.1

1.5 0.1

Structure

Epitaxial planar type

PNP silicon transistor

(1) (2) (3)

(1) Base

(2) Collector

(3) Emitter

(1) Base

(2) Collector

(3) Emitter

ROHM : CPT3

EIAJ : SC-63

ROHM : MPT3

EIAJ : SC-62

Absolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

VCBO

VCEO

VEBO

−80

−5

−1

−2

0.5

A (DC)

Collector current

∗1

∗2

A (Pulse)

2SB1260

Collector power

dissipation

2SB1181

150

W (Tc=25°C

)

Junction temperature

Storage temperature

°C

Tstg

−55 to +150

1 2SB1260 : Pw=20ms duty=1/2

2 2SB1260 : When mounted on a 40

∗

×40×0.7 mm ceramic board.

∗

Electrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Typ.

−

Max.

Unit

Conditions

BV^CBO

BVCEO

BVEBO

−80

−5

−

= −50

= −1mA

= −50

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

CBO

EBO

CE(sat)

−

−1

−0.4

390

−

μA

CB= −60V

EB= −4V

−

μA

Emitter cutoff current

−

C/I

= −500mA/ −50mA

= −0.1A

=50mA, f=100MHz

Collector-emitter saturation voltage

DC current transfer ratio

120

−

MHz

CE= −3V, I

Transition frequency 2SB1181

100

CE= −10V, I

CB= −10V

2SB1260

−

Output capacitance

Cob

E=0A

2SB1181

−

f=1MHz

www.rohm.com

2012.01 - Rev.G

1/2

12 3

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