Datasheet > 2SB1260

2SB1260

更新时间： 2024-11-18 07:30:03

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
1页	214K
描述
TRANSISTOR(PNP)

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中文翻译

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数据手册

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2SB1260 数据手册

2SB1260

TRANSISTOR(PNP)

SOT-89-3L

1. BASE

FEATURES

2. COLLECTOR

3. EMITTER

Power Transistor

High Voltage and Current

Low Collector-emitter saturation voltage

Complements the 2SD1898

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-80

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

-80

-5

Collector Current

-1

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

500

℃/W

℃

R_θJA

T_j

250

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

-80

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=-50µA,I_E=0

I_C=-1mA,I_B=0

I_E=-50µA,I_C=0

V_CB=-60V,I_E=0

-1

µA

Emitter cut-off current

I_EBO

V_EB=-4V,I_C=0

DC current gain

h_FE

V_CE=-3V, I_C=-0.1A

I_C=-500mA,I_B=-50mA

V_CB=-10V,I_E=0, f=1MHz

390

-0.4

Collector-emitter saturation voltage

Collector output capacitance

V_CE(sat)

C_ob

V^CE=-5V,I^C=-50mA,

f=30MHz

f_T

100

MHz

Transition frequency

CLASSIFICATION OF h_FE

120–270

RANK

RANGE

82–180

180–390

MARKING

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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