Datasheet > 2SB1260_1

2SB1260_1

更新时间： 2024-11-19 04:25:51

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	93K
描述
Power Transistor (−80V, −1A)

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中文翻译

获取价格

数据手册

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2SB1260_1 数据手册

2SB1260 / 2SB1181 / 2SB1241

Transistors

Power Transistor (−80V, −1A)

2SB1260 / 2SB1181 / 2SB1241

zExternal dimensions (Unit : mm)

zFeatures

1) Hight breakdown voltage and high current.

2SB1260

2SB1181

0.2

2.3

BV^CEO= −80V, I

2) Good h^FElinearty.

3) Low V^CE(sat)

= −1A

6.5 0.2

0.2

−

0.1

C0.5

5.1

0.2

0.5 0.1

−

0.1

4.5

−0.1

0.2

1.5

1.6 0.1

−0.1

4) Complements the 2SD1898 / 2SD1863 /

2SD1733.

0.65 0.1

0.75

(1) (2) (3)

0.9

0.1

0.4

−0.05

0.55 0.1

1.0 0.2

0.5 0.1

3.0 0.2

2.3 0.2 2.3 0.2

0.4 0.1

1.5 0.1

0.4 0.1

1.5 0.1

(1) (2) (3)

(1) Base

(2) Collector

(3) Emitter

zStructure

Epitaxial planar type

PNP silicon transistor

(1) Base

(2) Collector

(3) Emitter

ROHM : CPT3

EIAJ : SC-63

ROHM : MPT3

EIAJ : SC-62

Abbreviated

symbol: BE

∗

2SB1241

2.5 0.2

6.8 0.2

0.65Max.

0.5 0.1

(1) (2)

2.54

(3)

2.54

1.05

0.45 0.1

(1) Emitter

(2) Collector

(3) Base

ROHM : ATV

Denotes hFE

∗

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

−80

−5

Unit

VCBO

VCEO

VEBO

−1

A (DC)

A (Pulse)

Collector current

∗1

−2

0.5

2SB1260

∗2

∗3

Collector power

dissipation

2SB1241, 2SB1181

2SB1181

W (Tc=25°C

)

Junction temperature

Storage temperature

150

°C

Tstg

−55 to 150

1 2SB1260 : Pw=20ms duty=1/2

∗

2SB1241 : Single pulse, Pw=100ms

2 2SB1260 : When mounted on a 40

40×

0.7 mm ceramic board.

∗

3 2SB1241 : Printed circuit board, 1.7mm thick, collector copper plating 100mm²or larger.

∗

Rev.C

1/3

12 3 4

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