Datasheet > 2SB1260

2SB1260

更新时间： 2024-11-19 17:01:11

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	376K
描述
80V,1A,General Purpose PNP Bipolar Transistor

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数据手册

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2SB1260 数据手册

Product Specification

Power Transistor(-80V,-1A)

2SB1260

FEATURES



High breakdown voltage and

high current.

BV_CEO=-80V,I_C=-1A

Good h_FEVLinearity.

Low V_CE(sat).



Complements the 2SD1898.

APPLICATIONS



Epitaxial planar type PNP silicon transistor

SOT-89

ORDERING INFORMATION

Type No.

2SB1260

Marking

Package Code

SOT-89

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Unit

V_CBO

V_CEO

V_EBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-80

-5

Collector Current –DC

-1

-2

I_C

-Pulse

P_c

Collector power Dissipation

0.5

T_j

Junction Temperature

Storage Temperature

150

℃

T_stg

-55 to +150

*1: When mountef on a 40*40*0.7mm ceramic board.

STM0236A

www.gmesemi.com

12 3 4

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与2SB1260相关器件

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2SB1260_08	UTC	获取价格	POWER TRANSISTOR
2SB1260_09	ROHM	获取价格	Power Transistor (-80V, -1A)
2SB1260_1	ROHM	获取价格	Power Transistor (−80V, −1A)
2SB1260_11	ROHM	获取价格	Power Transistor (-80V, -1A)
2SB1260_12	ROHM	获取价格	Power Transistor
2SB1260_15	WINNERJOIN	获取价格	TRANSISTOR (PNP)
2SB1260D	BL Galaxy Electrical	获取价格	80V,1A,Medium Power PNP Bipolar Transistor
2SB1260G-X-AB3-R	UTC	获取价格	POWER TRANSISTOR
2SB1260G-X-TN3-R	UTC	获取价格	POWER TRANSISTOR
2SB1260I	BL Galaxy Electrical	获取价格	80V,1A,Medium Power PNP Bipolar Transistor