Datasheet > 2SB1260

2SB1260

更新时间： 2024-11-19 14:53:07

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	2237K
描述
双极型晶体管

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技术参数
数据手册

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2SB1260 技术参数

极性：	PNP	Collector-emitter breakdown voltage：	80
Collector Current - Continuous：	1	DC current gain - Min：	82
DC current gain - Max：	390	Transition frequency：	80
Package：	SOT-89	Storage Temperature Range：	-55-150
class：	Transistors

2SB1260 数据手册

2SB1260

Plastic-encapsulate PNP Transistors

1.70 0.1

■ Features

● Hight breakdown voltage and high current.

● Low collector-emitter saturation voltage V^CE(sat)

● Good hFE linearty.

0.42 0.1

0.46 0.1

● Complementary to 2SD1898

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

-80

-5

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector current -Pulse

-1

-2

Collector Power Dissipation

0.5

℃

Junction Temperature

150

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-80

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA, I =0

= -100μA， I

^CB= -60V , I =0

EB= -4V , I =0

E=0

C=0

CBO

EBO

-1

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-500 mA, I

=-50mA

-0.4

-1.2

390

=-500 mA, I

hFE

^CE= -3V, I

C= -100 mA

120

Collector output capacitance

Transition frequency

CB= -10V, I

CE= -10V, I

= 0,f=1MHz

= 50mA,f=100MHz

100

MHz

■ Classification of hfe

Type

Range

Marking

2SB1260-Q

120-270

BE Q*

2SB1260-R

180-390

BE R*

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Revision:20170701-P1

mail:lge@lgesemi.com

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