Datasheet > 2SB1260

2SB1260

更新时间： 2024-11-17 06:24:03

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	51K
描述
Power Transistor

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中文翻译

获取价格

数据手册

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2SB1260 数据手册

SMD Type

Transistors

Power Transistor

2SB1260

Features

High breakdown voltage and high

current.BV^CEO= -80V, IC=-1A

Good hFE linearity.

Low VCE(sat).

Epitaxial planar type

PNP silicon transistor

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-80

-5

Collector current

-1

-2

Collector current(Pulse)

Collector power dissipation

Junction temperature

I^CP*

P^C

0.5

150

Storage temperature

Tstg

-55 to +150

* Single pulse, Pw=100ms

Electrical Characteristics Ta = 25

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol

Testconditons

Min

-80

-5

Typ

Max

Unit

BV^CBOIC=-50ìA

BV^CEOIC=-1mA

BV^EBOIE=-50ìA

ICBO

I^EBO

h^FE

VCB=-60V

VEB=-4V

VCE=-3V, IC=-0.1A

-1

ìA

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

390

-0.4

V^CE(sat)IC=-500mA,IB=-50mA

Transition frequency

C^ob

f^T

VCE=-5V, IE=50mA, f=30MHz

VCB=-10V, IE=0A, f=1MHz

100

MHz

Output capacitance

hFE Classification

Marking

Rank

hFE

82 180

120 270

180 390

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2SB1260_08	UTC	获取价格	POWER TRANSISTOR
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2SB1260_15	WINNERJOIN	获取价格	TRANSISTOR (PNP)
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2SB1260G-X-AB3-R	UTC	获取价格	POWER TRANSISTOR
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