Datasheet > 2SB1260

2SB1260

更新时间： 2024-11-18 07:30:03

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	188K
描述
-1 A, -80 V PNP Plastic Encapsulated Transistor

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2SB1260 数据手册

2SB1260

-1 A, -80 V

PNP Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-89

FEATURES

ꢀ High breakdown voltage and high current BV_CEO=-80V, I_C=-1A

ꢀ Good h_FElinearity

ꢀ Complements to 2SD1898

PACKAGE INFORMATION

Weight: 0.05 g (approximately)

Collector

Millimeter

REF.

Min.

Max.

4.60

4.25

1.60

2.60

Min.

Max.

MARKING

4.40

3.94

1.40

2.30

0.40

0.58

Base

1.50 TYP

3.00 TYP

0.32

0.35

0.52

0.44

Emitter

1.50

0.89

1.70

1.20

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Unit

Parameter

Symbol

Ratings

Collector-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

-80

Collector-Emitter Voltage

Emitter-Base Voltage

-80

-5

Collector Current -Continuous

Collector Power Dissipation

Junction & Storage Temperature

-1

0.5

P_C

°C

T_J, T_STG

150, -55~150

PNP ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-80

-5

I_C=-50μA, I_E=0

I_C= -1mA, I_B=0

I_E=-50μA, I_C=0

V_CB=-60V, I_E=0

-1

390

-0.4

μA

Emitter cut-off current

I_EBO

V_EB=-4 V, I_C=0

DC current gain

h_FE

V_CE=-3V, I_C= -100mA

I_C=-500mA, I_B= -50mA

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f _T

100

MHz V_CE=-5V, I_C=-50mA, f=30MHz

Output Capacitance

C_OB

V_CB=-10V, I_E=0, f=1MHz

CLASSIFICATION OF hFE2

Rank

Range

82 - 180

120 - 270

180 - 390

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

01-July-2007 Rev. A

Page 1 of 2

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