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2SB1260 PDF预览

2SB1260

更新时间: 2024-11-17 22:39:19
品牌 Logo 应用领域
罗姆 - ROHM 晶体晶体管
页数 文件大小 规格书
3页 83K
描述
Power Transistor

2SB1260 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.35外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):82
JESD-30 代码:R-PSSO-F3JESD-609代码:e2
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Copper (Sn/Cu)
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SB1260 数据手册

 浏览型号2SB1260的Datasheet PDF文件第2页浏览型号2SB1260的Datasheet PDF文件第3页 
2SB1260 / 2SB1181 / 2SB1241  
Transistors  
Power Transistor (80V, 1A)  
2SB1260 / 2SB1181 / 2SB1241  
!Features  
!External dimensions (Units : mm)  
1) High breakdown voltage and high  
current.  
2SB1260  
2SB1181  
+0.2  
2.3  
6.5±0.2  
0.1  
C0.5  
CEO  
C
BV = 80V, I =1A  
+0.2  
5.1  
+0.2  
4.5  
0.5±  
0.1  
0.1  
0.1  
+0.2  
1.5  
FE  
2) Good h linearity.  
0.1  
1.6±0.1  
CE(sat)  
3) Low V  
.
4) Complements the 2SD1898 /  
2SD1863 / 2SD1733.  
0.65  
±0.1  
0.75  
(1) (2) (3)  
0.9  
0.2 2.3±  
+0.1  
0.4  
0.05  
0.55  
±0.1  
0.5±0.1  
3.0±0.2  
2.3±  
0.2  
0.4±0.1  
1.5±0.1  
0.4±0.1  
1.5±0.1  
1.0±0.2  
!Structure  
(1) (2) (3)  
Epitaxial planar type  
PNP silicon transistor  
(1) Base  
(2) Collector  
(3) Emitter  
(1) Base  
(2) Collector  
(3) Emitter  
ROHM : CPT3  
EIAJ : SC-63  
Abbreviated  
symbol: BH  
ROHM : MPT3  
EIAJ : SC-62  
2SB1241  
2.5±0.2  
6.8±0.2  
0.65Max.  
0.5±0.1  
(1) (2)  
2.54  
(3)  
2.54  
1.05  
0.45±0.1  
(1) Emitter  
(2) Collector  
(3) Base  
ROHM : ATV  
* Denotes hFE  
!Absolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
Unit  
VCBO  
VCEO  
VEBO  
-80  
V
V
-80  
-5  
V
I
C
-1  
A(DC)  
A(Pulse)  
Collector current  
*1  
I
CP  
-2  
0.5  
2SB1260  
*2  
*3  
2
W
Collector power  
dissipation  
PC  
2SB1241, 2SB1181  
2SB1181  
1
10  
W(Tc=25˚C)  
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
-55~+150  
*1 Single pulse, Pw=100ms  
*2 When mounted on a 40×40×0.7 mm ceramic board.  
*3 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.  

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