是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.35 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 82 |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e2 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 2 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Copper (Sn/Cu) |
端子形式: | FLAT | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1260_08 | UTC |
获取价格 |
POWER TRANSISTOR | |
2SB1260_09 | ROHM |
获取价格 |
Power Transistor (-80V, -1A) | |
2SB1260_1 | ROHM |
获取价格 |
Power Transistor (−80V, −1A) | |
2SB1260_11 | ROHM |
获取价格 |
Power Transistor (-80V, -1A) | |
2SB1260_12 | ROHM |
获取价格 |
Power Transistor | |
2SB1260_15 | WINNERJOIN |
获取价格 |
TRANSISTOR (PNP) | |
2SB1260D | BL Galaxy Electrical |
获取价格 |
80V,1A,Medium Power PNP Bipolar Transistor | |
2SB1260G-X-AB3-R | UTC |
获取价格 |
POWER TRANSISTOR | |
2SB1260G-X-TN3-R | UTC |
获取价格 |
POWER TRANSISTOR | |
2SB1260I | BL Galaxy Electrical |
获取价格 |
80V,1A,Medium Power PNP Bipolar Transistor |