Datasheet > 2SB1260

2SB1260

更新时间： 2024-06-27 12:13:13

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	599K
描述
SOT-89

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中文翻译

获取价格

数据手册

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2SB1260 数据手册

2SB1260

BIPOLAR TRANSISTOR (PNP)

FEATURES

 Complementary to 2SD1898

 Power Transistor

 High Voltage and Current

 Low V_CE(sat)

 Surface Mount device

SOT-89

MECHANICAL DATA



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

-80

Unit

Collector-Base Voltage

Collector-Emitter Voltage

-80

-5

Emitter-Base Voltage

Collector Current

-1

Collector Power Dissipation

500

250

150

°C/W

°C

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-80

-5

I_C=-50uA，I_E=0

I =-1mA I =0

V(BR)CEO

V(BR)EBO

I_CBO

，

I_E=-50uA，I_C=0

-1

uA V_CB=-60V, I_E=0

uA V_EB=-4V, I_C=0

V_CE=-3V, I_C=-0.1A

Emitter cut-off current

I_EBO

DC current gain

h_FE

390

-0.4

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C=-500mA，I_B=-50mA

V_CE=-5V,I_C=-50mA,f=30

100

MHz

V_CB=-10V, I_E=0, f=1

Collector output capacitance

C_ob

MHz

CLASSIFICATION OF h_FE

Rank

120-270

Range

82-180

180-390

Marking

1 / 4

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中文翻译

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