2SB1259

更新时间： 2024-09-12 22:52:39

品牌	Logo	应用领域
三垦 - SANKEN		晶体继电器晶体管开关电机驱动局域网
页数	文件大小	规格书
1页	28K
描述
Silicon PNP Epitaxial Planar Transistor(Driver for Solenoid, Relay and Motor and General Purpose)

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中文翻译

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数据手册

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2SB1259 数据手册

(3kΩ)(100Ω)

Darlington 2 S B1 2 5 9

Equivalent circuit

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081)

Application : Driver for Solenoid, Relay and Motor and General Purpose

External Dimensions FM20(TO220F)

■Absolute maximum ratings

■Electrical Characteristics

(Ta=25°C)

2SB1259

Symbol

V^CBO

VCEO

VEBO

Unit

Symbol

I^CBO

2SB1259

–10max

–120min

2000min

–1.5max

–2.0max

100typ

Conditions

Unit

µA

±0.2

4.2

±0.2

10.1

0.5

2.8

–120

V^CB=–120V

–120

IEBO

V^EB=–6V

–6

V(BR)CEO

hFE

I^C=–10mA

±0.2

ø3.3

–10(Pulse–15)

–1

V^CE=–4V, IC=–5A

I^C=–5A, IB=–10mA

V^CE=–12V, IE=0.2A

V^CB=–10V, f=1MHz

VCE(sat)

VBE(sat)

30(Tc=25°C)

150

°C

±0.15

1.35

MHz

±0.15

1.35

Tstg

COB

145typ

–55 to +150

+0.2

-0.1

0.85

+0.2

-0.1

0.45

±0.2

2.4

2.54

■Typical Switching Characteristics (Common Emitter)

±0.2

2.2

Weight : Approx 2.0g

a. Type No.

b. Lot No.

R^L

VBB1

V^BB2

(V)

I^B1

I^B2

ton

V^CC

(V)

I^C

tstg

(Ω)

(V)

(mA)

(µs)

(A)

(µs)

C E

–10

–6

0.6typ

–30

–3

1.6typ

0.5typ

–

IC VCE Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

IC VBE Temperature Characteristics (Typical)

(VCE=–4V)

–15

–10

–5

–3

–10

–8

–6

–4

–2

IC=–10A

I^B=–1mA

–5A

–1

–1A

–0.2

–1

–2

–3

–4

–5

–6

–1

–10

–100

–1000

–1

–2 –2.2

Collector-Emitter Voltage VCE(V)

Base Current IB(mA)

Base-Emittor Voltage V^BE(V)

–

h^FEI^CCharacteristics (Typical)

h^FEI^CTemperature Characteristics (Typical)

^j-at Characteristics

(VCE=–4V)

20000

10000

5000

Typ

5000

1000

500

1000

500

100

0.5

0.3

100

–0.02

100

1000

–0.1

–0.5 –1

–5

–10

–0.03

–0.1

–0.5

–1

–5

–10

Time t(ms)

Collector Current I^C(A)

Collector Current IC(A)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=–12V)

200

100

–20

–10

–5

Natural Cooling

Typ

Silicone Grease

Heatsink: Aluminum

in mm

–1

150x150x2

100x100x2

–0.5

Without Heatsink

Natural Cooling

50x50x2

–0.1

Without Heatsink

–0.05

–0.03

–3

–5

–10

–50

–100 –200

0.05 0.1

0.5

100

125

150

Collector-Emitter Voltage V^CE(V)

Ambient Temperature Ta(˚C)

Emitter Current IE(A)

中文翻译

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与2SB1259相关器件

型号	品牌	获取价格	描述	数据表
2SB1259_07	SANKEN	获取价格	Silicon PNP Epitaxial Planar Transistor
2SB1260	WINNERJOIN	获取价格	TRANSISTOR (PNP)
2SB1260	TYSEMI	获取价格	High breakdown voltage and high current.BVCEO= -80V, IC=-1A PNP silicon transistor
2SB1260	WILLAS	获取价格	SOT-89 Plastic-Encapsulate Transistors
2SB1260	ROHM	获取价格	Power Transistor
2SB1260	UTC	获取价格	Plastic-Encapsulated Transistors
2SB1260	HTSEMI	获取价格	TRANSISTOR(PNP)
2SB1260	SECOS	获取价格	-1 A, -80 V PNP Plastic Encapsulated Transistor
2SB1260	KEXIN	获取价格	Power Transistor
2SB1260	CJ	获取价格	SOT-89-3L

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