Datasheet > 2SB1260

2SB1260

更新时间： 2024-11-19 14:53:07

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1728K
描述
SOT-89-3L

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中文翻译

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数据手册

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2SB1260 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

SOT-89-3L

2SB1260

TRANSISTOR (PNP)

1. BASE

FEATURES

2. COLLECTOR

Power Transistor

High Voltage and Current

3. EMITTER

Low Collector-emitter saturation voltage

Complements the 2SD1898

MARKING

Solid dot = Green molding compound device.

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-80

Unit

Collector-Emitter Voltage

-80

Emitter-Base Voltage

-5

Collector Current

-1

P_C

Collector Power Dissipation

500

℃/W

℃

R_θJA

T_J,T_stg

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

250

-55~+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=-50µA,I_E=0

Min

-80

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=-1mA,I_B=0

I_E=-50µA,I_C=0

V_CB=-60V,I_E=0

-1

µA

Emitter cut-off current

I_EBO

V_EB=-4V,I_C=0

DC current gain

h_FE

V_CE=-3V, I_C=-0.1A

I_C=-500mA,I_B=-50mA

V_CB=-10V,I_E=0, f=1MHz

390

-0.4

Collector-emitter saturation voltage

Collector output capacitance

V_CE(sat)

C_ob

V^CE=-5V,I^C=-50mA,

f=30MHz

f_T

100

MHz

Transition frequency

CLASSIFICATION OF h_FE

120–270

RANK

RANGE

82–180

180–390

MARKING

www.jscj-elec.com

Rev. - 2.2

12 3 4

中文翻译

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2SB1260_08	UTC	获取价格	POWER TRANSISTOR
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2SB1260_15	WINNERJOIN	获取价格	TRANSISTOR (PNP)
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2SB1260G-X-AB3-R	UTC	获取价格	POWER TRANSISTOR
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2SB1260I	BL Galaxy Electrical	获取价格	80V,1A,Medium Power PNP Bipolar Transistor