是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.51 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 400 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 140 | JESD-30 代码: | R-PSSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
功耗环境最大值: | 1 W | 最大功率耗散 (Abs): | 0.5 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 35 MHz | VCEsat-Max: | 1 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1971(TE12L) | TOSHIBA |
获取价格 |
TRANSISTOR,BJT,PNP,400V V(BR)CEO,500MA I(C),SOT-89 | |
2SA1971_09 | TOSHIBA |
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High-Voltage Switching Applications | |
2SA1972 | TOSHIBA |
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TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS) | |
2SA1972_07 | TOSHIBA |
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High-Voltage Switching Applications | |
2SA1972_09 | TOSHIBA |
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High-Voltage Switching Applications | |
2SA1973 | SANYO |
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DC/DC Converter Applications | |
2SA1973-5 | SANYO |
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TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | SOT-346 | |
2SA1973-6 | SANYO |
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TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | SOT-346 | |
2SA1977 | NEC |
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PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER | |
2SA1977 | RENESAS |
获取价格 |
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER |