Datasheet > 2N7002KDU

2N7002KDU

更新时间： 2024-11-18 12:53:07

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
4页	372K
描述
N Channel MOSFET ESD Protected 2000V

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2N7002KDU 数据手册

2N7002KDU

SEMICONDUCTOR

N Channel MOSFET

ESD Protected 2000V

TECHNICAL DATA

INTERFACE AND SWITCHING APPLICATION.

FEATURES

· ESD Protected 2000V.

· High density cell design for low R_DS(ON)

· Voltage controlled small signal switch.

· Rugged and reliable.

DIM MILLIMETERS

2.00+0.20

1.3+0.1

2.1+0.1

1.25+0.1

· High saturation current capablity.

0.65

0.2+0.10/-0.05

0-0.1

0.9+0.1

0.15+0.1/-0.05

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

SYMBOL RATING

UNIT

1. Q SOURCE

2. Q GATE

3. Q DRAIN

4. Q SOURCE

5. Q GATE

6. Q DRAIN

V_DSS

V_GSS

I_D

Drain-Source Voltage

±20

300

Gate-Source Voltage

Continuous

Drain Current

Pulsed ^{(Note 1)}

I_DP

1200

270

Drain Power Dissipation ^{(Note 2)}

Junction Temperature

P_D

℃

US6

T_j

150

T_stg

R_thJA

Storage Temperature Range

-55∼ 150

460

℃

Thermal Resistance, Junction to Ambient ^{(Note 2)}

℃/W

Note 1) Pulse Width≦10㎲, Duty Cycle≦1%

Note 2) Surface Mounted on 2 ×2 FR4 Board

Marking

EQUIVALENT CIRCUIT

Lot No.

Type Name

2013. 7. 19

Revision No : 1

1/4

12 3 4

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