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2N7002KG8 PDF预览

2N7002KG8

更新时间: 2024-11-19 01:19:43
品牌 Logo 应用领域
固锝 - GOOD-ARK /
页数 文件大小 规格书
5页 573K
描述
60V MOSFET

2N7002KG8 数据手册

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2N7002KG8  
60V MOSFET  
Main Product Characteristics  
VDSS 60V  
RDS(on) 7.5ohm(max.)  
ID  
A
SOT-363  
SchematicDiagram  
Features and Benefits  
AdvancedtrenchMOSFETprocess technology  
Special designed for PWM, load switching and  
generalpurposeapplications  
Ultralowon-resistancewithlowgatecharge  
Fastswitching andreversebodyrecovery  
150operating temperature  
Leadfreeproduct  
Description  
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the  
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely  
efficient andreliable devicefor useinpower switching application and awidevarietyof other applications.  
Absolute Max Rating  
Parameter  
Symbol  
VDS  
VGS  
ID  
Limit  
60  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
±20  
V
0.115  
0.8  
A
Drain Current-Continuous@ Current-Pulsed (Note 1)  
IDM  
A
Maximum Power Dissipation  
PD  
0.38  
W
Operating Junction and Storage Temperature Range  
TJ,TSTG  
-55 To 150  
Thermal Resistance  
Thermal Resistance,Junction-to-Ambient (Note 2)  
RθJA  
328  
/W  
www.goodark.com  
Page 1 of 5  
Rev.1.1  

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