2N7002KT

更新时间： 2024-01-29 11:53:18

品牌	Logo	应用领域
WEITRON		/
页数	文件大小	规格书
5页	627K
描述
N-Channel ENHANCEMENT MODE POWER MOSFET

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技术参数
数据手册

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2N7002KT 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002KT 数据手册

2N7002KT

N-Channel ENHANCEMENT MODE

POWER MOSFET

P b

Lead(Pb)-Free

FEATURES:

SC-89

* Gate-Source ESD Protected: 1500 V

* Fast Switching Speed

* Low On-Resistance

Drain

* Low Voltage Driver

APPLICATIONS:

* Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories

* Battery Operated Systems

* Power Supply Converter Circuits

* Load/Power Switching Cell Phones, Pagers

(Top View)

Gate

Source

Maximum Ratings (T =25°C unless otherwise specified)

Characteristic

Drain-Source Voltage

Symbol

Values

Unit

V_DSS

V_GSS

Gate-Source Voltage

Drain Current

Continuous

115

800

115

I_D

I_DP

Pulsed

Reverse drain current

Continuous

I_D

I_DRP

Pulsed

800

225

°C

P_D

Total Power Dissipation

Junction temperature Range

Storage Temperature Range

Note 1. Pw ≤ 10µs, Duty cycle ≤ 1%

T_j

150

Tstg

-55 to +150

°C

2. When mounted on a 1 x 0.75 x 0.062 inch glass epoxy board

Device Marking

2N7002KT = RS

WEITRON

http://www.weitron.com.tw

1/5

14-Sep-09

12 3 4 5

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