Datasheet > 2N7002KL

2N7002KL

更新时间： 2024-11-19 14:55:47

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	902K
描述
SOT-23

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中文翻译

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数据手册

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2N7002KL 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate MOSFETs

2N7002KL N-channel MOSFET

V_(BR)DSSR_DS(on)MAX

I_D

SOT-23

10V

3.5

340

Ω 4.5V

1. GATE

2. SOURCE

3. DRAIN

APPLICATION

FEATURE

Load Switch for Portable Devices

High density cell design for Low R_DS

（

）

DC/DC Converter

Voltage controlled small signal switch

Rugged and reliable

High saturation current capability

ESD protected

MARKING

Equivalent circuit

72K

72K_L=Device code

Solid dot = Green molding compound device.

MOSFET MAXIMUM RATINGS (T^a= 25°C unless otherwise noted)

Symbol Parameter

Unit

Value

±20

340

Drain-Source voltage

Gate-Source voltage

Drain Current

Power Dissipation

0.35

-55~+150

357

℃

T _J,T s tg

Operation Junction and Storage Temperature Range

RθJA

Thermal Resistance fromJunction to Ambient

℃ /W

www.jscj-elec.com

Rev. - 2.1

12 3 4 5

中文翻译

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