Datasheet > 2N7002KG8_15

2N7002KG8_15

更新时间： 2024-11-19 01:16:27

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
5页	573K
描述
60V MOSFET

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中文翻译

获取价格

数据手册

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2N7002KG8_15 数据手册

2N7002KG8

60V MOSFET

Main Product Characteristics

V_DSS60V

R_DS(on) 7.5ohm(max.)

I_D

SOT-363

SchematicDiagram

Features and Benefits



AdvancedtrenchMOSFETprocess technology

Special designed for PWM, load switching and

generalpurposeapplications



Ultralowon-resistancewithlowgatecharge

Fastswitching andreversebodyrecovery

150℃ operating temperature

Leadfreeproduct

Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the

on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely

efficient andreliable devicefor useinpower switching application and awidevarietyof other applications.

Absolute Max Rating

Parameter

Symbol

VDS

VGS

I_D

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

0.115

0.8

Drain Current-Continuous@ Current-Pulsed (Note 1)

I_DM

Maximum Power Dissipation

P_D

0.38

℃

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 To 150

Thermal Resistance

Thermal Resistance,Junction-to-Ambient (Note 2)

R_θJA

328

℃/W

www.goodark.com

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Rev.1.1

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