Datasheet > 2N7002KS3

2N7002KS3

更新时间： 2024-11-19 18:09:55

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
7页	113K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 0.32 A;Rds-on (typ) (mOhms) : 2300 mOhms;Maximum Power Dissipation (W) : 0.3 W;Vgs(th) (typ) : 1.45 V;Input Capacitance (Ciss) : 34 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-323

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2N7002KS3 数据手册

2N7002KS3

Small Signal MOSFET

380 mAmps, 60 Volts N–Channel SC-70

FEATURES

We declare that the material of product compliance with

RoHS requirements and Halogen Free.

ESD Protected

SC70(SOT-323)

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

10000/Tape&Reel

2N7002KS3

MAXIMUM RATINGS(Ta = 25º C)

Parameter

Symbol

VDSS

VGS

Limits

Unit

Vdc

Drain–Source Voltage

Gate-Source Voltage

Drain Current

mAdc

– Steady State TA = 25°C

TA = 85°C

320

230

380

270

1.5

– t<5s

TA = 25°C

TA = 85°C

Pulsed Drain Current (tp=10μs)

Source Current (Body Diode)

IDM

300

THERMAL CHARACTERISTICS

Parameter

Total Device Dissipation(Note 1)

– Steady State

Symbol

Limits

Unit

300

420

– t<5s

Junction−to−Ambient(Note 1)

– Steady State

– t<5s

RΘJA

ºC/W

417

300

260

ϨC

Lead Temperature for Soldering

Purposes (1/8 " from case for 10 s)

Junction and Storage temperature

TJ,Tstg −55∼+150

ϨC

ESD

2000

Gate−Source ESD Rating(HBM,

Method 3015)

1. FR–5 = 1.0×0.75×0.062 in.

2018-08/74

REV:O

12 3 4 5 6 7

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