Datasheet > 2N7002KT

2N7002KT

更新时间： 2024-06-27 12:11:18

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	744K
描述
SOT-523

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中文翻译

获取价格

数据手册

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2N7002KT 数据手册

2N7002KT

MOSFET (N-CHANNEL)

FEATURES

 Low On-Resistance: RDS(ON)

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

SOT-523

MECHANICAL DATA



Case: SOT-523

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0



Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_DS

V_GS

I_D

Value

Unit

Drain-source voltage

Gate-source voltage

±20V

340

Continuous drain current

Pulsed drain current (Note 1)

Power dissipation

IDM

800

0.15

Thermal resistance from Junction to ambient

Junction And Storage temperature Range

R_θJA

357

°C/W

TJ,TSTG

-65 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symb

Min

Typ Max Unit

Conditions

Static Characteristics

V(BR)DSS

V_GS(

Drain-Source breakdown voltage

Gate-threshold voltage (note 1)

Zero gate voltage drain current

VGS=0V, ID=250μA

VDS= VGS, ID=1mA

1.3

2.5

±10

±200

±100

4.0

µA V_DS=48V,

I_DSS

VGS=0V

VGS=±20V

VGS=±10V

VGS=±5V

V_DS=0V,

nA V_DS=0V,

µA

Gate-body leakage current

I_GSS

V_DS=0V,

1.1

0.9

V =4.5V, I =0.2A

Drain-source on-resistance (note 1)

R_DS(ON)

V_SD

4.0

V^GS=10V, I^D=0.5A

Diode forward voltage (note 1)

Gate-Source Breakdown Voltage

IS=0.3A, VGS=0V

1.5

±30

Igs=±1mA (Open Drain)

VGS=0V,IS=0.3A,VR=25V,

dls/dt=-100A/μS

BVGSO ±21.5

Recovered charge

Q_r

Dynamic Characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Switching Characteristics

Turn-on delay time

C_iss

C_oss

C_rss

V_{DS=10V, VGS=0V, f=1MHz}

t_d(on)

t_d(off)

nS VDD=50V,VGS=10V,RG=50Ω,

RGS=50Ω,RL=250Ω

Turn-off delay time

VGS=0V,IS=0.3A,VR=25V,

dls/dt=-100A/μS

Reverse recovery time

t_rr

Note:1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2% .

1 / 4

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