Datasheet > 2N7002KQB

2N7002KQB

更新时间： 2024-11-19 11:11:27

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	276K
描述
60 V N-channel Trench MOSFETProduction

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中文翻译

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2N7002KQB 数据手册

2N7002KQB

60 V N-channel Trench MOSFET

22 September 2021

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3

(SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

2. Features and benefits

•

Logic-level compatible

•

Side wettable flanks for optical solder inspection

Ultra small and leadless SMD plastic package: 1.1 x 1 x 0.48 mm

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 1 kV HBM (Class H1C)

AEC-Q101 qualified

3. Applications

•

Relay driver

High-speed line driver

Low-side load switch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-16

I_D

V_GS= 10 V; T_amb= 25 °C

[1]

720

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 720 mA; T_j= 25 °C

635

850

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm².

12 3 4 5 6 7...15

中文翻译

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