Datasheet > 2N7002KDW_10

2N7002KDW_10

更新时间： 2024-11-18 07:29:15

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
5页	114K
描述
60V N-Channel Enhancement Mode MOSFET - ESD Protected

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数据手册

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2N7002KDW_10 数据手册

2N7002KDW

60V N-Channel Enhancement Mode MOSFET - ESD Protected

SOT-363

Unit: inch (mm)

FEATURES

• R_DS(ON), V_GS@10V,I_DS@500mA=3Ω

• R_DS(ON), V_GS@4.5V,I_DS@200mA=4Ω

0.054(1.35)

0.045(1.15)

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Very Low Leakage Current In Off Condition

• Specially Designed for Battery Operated Systems, Solid-State Relays

Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

• ESD Protected 2KV HBM

0.040(1.00)

0.031(0.80)

• In compliance with EU RoHS 2002/95/EC directives

0.10 MAX.

0.018(0.45)

0.006(0.15)

MECHANICALDATA

0.087(2.20)

0.078(2.00)

• Case: SOT-363 Package

• Terminals : Solderable per MIL-STD-750,Method 2026

• Marking : K27

Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )

PARAMETER

Drain-Source Voltage

Symbol

V_DS

Limit

Units

Gate-Source Voltage

V_GS

I_D

+20

115

800

Continuous Drain Current

Pulsed Drain Current

I_DM

T_A=25^OC

T_A=75^OC

200

120

Maximum Power Dissipation

P_D

T_J,T_STG

R_θJA

^OC

Operating Junction and Storage

Temperature Range

-55 to + 150

625

Junction-to Ambient Thermal

Resistance(PCB mounted)²

^OC/W

Note: 1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 5 sec

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

May 21.2010-REV.01

PAGE . 1

12 3 4 5

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