Datasheet > 2N7002KDW-AU

2N7002KDW-AU

更新时间： 2024-10-15 01:24:03

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
7页	326K
描述
60V N-Channel Enhancement Mode MOSFET - ESD Protected

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2N7002KDW-AU 数据手册

2N7002KDW-AU

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES

• R_DS(ON), V_GS@10V,I_DS@500mA=3Ω

• R_DS(ON), V_GS@4.5V,I_DS@200mA=4Ω

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Very Low Leakage Current In Off Condition

• Specially Designed for Battery Operated Systems, Solid-State Relays

Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

• ESD Protected 2KV HBM

• Acqire quality system certificate : TS16949

• AEC-Q101qualified

• Lead free in compliance with EU RoHS 2011/65/EU directive

• Green molding compound as per IEC61249 Std. . (Halogen Free)

MECHANICAL DATA

• Case: SOT-363 Package

• Terminals: Solderable per MIL-STD-750,Method 2026

• Approx. Weight: 0.0002 ounces, 0.006 grams

• Marking: K27

Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )

Parameter

Drain-Source Voltage

Symbol

V_DS

Limit

Units

Gate-Source Voltage

V_GS

I_D

+20

115

800

Continuous D rain C urrent

Pulsed Drain Current

I_DM

T_A=25^OC

T_A=75^OC

200

120

Maximum Power Dissipation

P_D

T_J,T_STG

R_θJA

^OC

Operating Junction and Storage

Temperature Range

-55 t o +150

625

Junction-to Ambient Thermal Resistance

(PCB mounted)²

^OC/W

Note:1.Maximum DC current limited by the package

2.Surface mounted on FR4 board, t<10 sec

3.Pulse width<300us, Duty cycle<2%

PAGE . 1

May 13,2015-REV.03

12 3 4 5 6 7

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