Datasheet > 2N7002KDWBQ

2N7002KDWBQ

更新时间： 2024-10-15 14:55:59

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
6页	586K
描述
Tape: 3K/Reel, 120K/Ctn.;

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数据手册

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2N7002KDWBQ 数据手册

2N7002KDWBQ

Features

• Trench Power LV MOSFET technology

• AEC-Q101 Qualified

DUAL

• ESD Protected up to 2KV (HBM)

• Moisture Sensitivity Level 1

• Halogen Free. “Green” Device ^(Note1)

N-CHANNEL

• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

Compliant. See Ordering Information)

MOSFET

Maximum Ratings

•

Operating Junction Temperature Range : -55°C to +150°C

Storage Temperature Range: -55°C to +150°C

SOT-363

•

Thermal Resistance:515°C/W Junction to Ambient(Steady-State)^(Note2)

Parameter

Rating

Symbol

V_DS

Unit

Drain-Source Voltage

Gate-Source Volltage

V_GS

±20

T_A=25°C

220

140

Continuous Drain Current

I_D

T_A=100°C

Pulsed Drain Current^(Note3)

Total Power Dissipation^(Note4)

I_DM

P_D

0.88

0.24

DIMENSIONS

MIN MAX MIN MAX

0.006 0.014 0.15 0.35

0.045 0.053 1.15 1.35

0.079 0.096 2.00 2.45

INCHES

Note:

DIM

NOTE

TYP.

1. Halogen free "Green” products are defined as those which contain <900ppm bromine,

<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

2. The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz.

Copper, in a still air environment with T_A=25°C. The Power dissipation P_DSMis based on

R_θJAtʇꢀ10s and the maximum allowed junction temperature of 150°C. The value in any

given application depends on the user's specific board design.

0.026

0.65

0.047 0.055 1.20 1.40

0.071 0.087 1.80 2.20

----- 0.004 ----- 0.10

0.031 0.043 0.80 1.10

0.010 0.018 0.26 0.46

0.003 0.006 0.08 0.15

3. Repetitive rating; pulse width limited by max. junction temperature.

4. P_Dis based on max. junction temperature, using junction to Ambient thermal resistance.

Internal Structure and Marking Code

SUGGESTED SOLDER PAD LAYOUT

72KD

Dot denotes Pin1

Rev.4-1-12202022

1/6

MCCSEMI.COM

12 3 4 5 6

中文翻译

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