Datasheet > 2N7002KE

2N7002KE

更新时间： 2024-11-21 12:30:51

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
4页	369K
描述
N Channel MOSFET

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中文翻译

获取价格

数据手册

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2N7002KE 数据手册

SEMICONDUCTOR

2N7002KE

N Channel MOSFET

TECHNICAL DATA

INTERFACE AND SWITCHING APPLICATION.

FEATURES

· ESD Protected 2000V.(Human Body Model)

· High density cell design for low R_DS(ON)

· Voltage controlled small signal switch.

· High-speed line driver.

DIM MILLIMETERS

1.60+0.20

0.85 0.10

· Low-side loadswitch.

0.70 0.10

0.27+0.10/-0.05

1.60+0.10

1.00 0.10

0.50

0.13+0.05

1. SOURCE

2. GATE

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

3. DRAIN

SYMBOL

V_DSS

V_GSS

I_D

RATING

UNIT

Drain-Source Voltage

Gate-Source Voltage

±20

300

ESM

Continuous

Drain Current

Pulsed ^{(Note 1)}

I_DP

1000

300

Drain Power Dissipation ^{(Note 2)}

Junction Temperature

P_D

℃

T_j

150

T_stg

Storage Temperature Range

-55∼ 150

416

℃

Thermal Resistance, Junction to Ambient ^{(Note 2)}

℃/W

R_thJA

Note 1) Pulse Width≦10㎲, Duty Cycle≦1%

Note 2) Surface Mounted on 2 ×2 FR4 Board

EQUIVALENT CIRCUIT

Marking

Type Name

2013. 7. 19

Revision No : 1

1/4

12 3 4

中文翻译

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