Datasheet > 2N7002KG

2N7002KG

更新时间： 2024-11-18 06:25:03

品牌	Logo	应用领域
SECOS		栅极
页数	文件大小	规格书
5页	681K
描述
N-Ch Small Signal MOSFET with Gate Protection

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中文翻译

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2N7002KG 数据手册

2N7002KG

190 mA, 60 V, R_DS(ON)= 2 Ω

N-Ch Small Signal MOSFET with Gate Protection

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-23

FEATURES

2 kV ESD Protection

Lower On-resistance: 2 Ω

Low Threshold: 2 V (Typ.)

Low Input Capacitance: 25 pF

Fast Switching Performance: 25 nS

Low Input and Output Leakage

Top View

C B

Drain

APPLICATIONS

Direct Logic-Level Interface:

TTL/CMOS

Drivers: Relays, Solenoids, Lamps,

Hammers, Display, Memories,

Transistors, etc.

Gate

Millimeter

Min. Max.

REF.

Min.

Max.

3.04

2.55

1.40

1.15

2.04

0.50

2.80

2.10

1.20

0.89

1.78

0.30

0.09

0.45

0.08

0.18

0.60

0.177

Battery Operated Systems

Solid-State Relays

0.6 REF.

0.89

1.02

Source

PACKAGE INFORMATION

Weight: 0.07800g (Approximately)

MARKING CODE

K7K

ABSOLUTE MAXIMUM RATINGS

Ratings

N-Ch

Parameter

Symbol

Unit

Test Conditions

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current²

Pulsed Drain Current¹

V_DS

V_GS

±20

300

190

800

0.35

0.14

@T_A=25°C

I_D

@T_A=100°C

I_DM

P_D

@T_A=25°C

Power Dissipation²

@T_A=100°C

Thermal Resistance

Junction-Ambient

Max.

350

°C/W

°C

R_θJA

Operating Junction and

Storage Temperature

Notes:

1. Pulse width limited by maximum junction temperature.

2. Surface mounted on FR4 board.

T_J, T_STG

-55 ~ +150

01-December-2008 Rev. B

Page 1 of 5

12 3 4 5

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