Datasheet > 2N7002KDWHQ

2N7002KDWHQ

更新时间： 2024-11-19 15:19:27

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	439K
描述
SOT-323

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中文翻译

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数据手册

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2N7002KDWHQ 数据手册

RoHS

COMPLIANT

2N7002KDWHQ

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

60V

● I_D

300mA

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

＜2.0ohm

＜2.5ohm

● ESD protected up to 2.0KV (HBM)

General Description

● Trench Power MV MOSFET technology

● Voltage controlled small signal switch

● Low input Capacitance

● Fast Switching Speed

● Low Input / Output Leakage

● Part no. with suffix “Q” means AEC-Q101 qualified

Applications

● Battery operated systems

● Solid-state relays

● Direct logic-level interface：TTL/CMOS

●

12V, 24V Automotive systems

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

V_DS

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_GS

±20

300

Drain Current @ T_A=25℃

Pulsed Drain Current ^A

I_D

I_DM

1.5

Total Power Dissipation @ T_A=25℃

P_D

416

℃/ W

℃

Thermal Resistance Junction-to-Ambient @ Steady State ^B

Junction and Storage Temperature Range

R_θJA

360

T_J,T_STG

-55～+175

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

2N7002KDWHQ

72KD.

3000

30000

120000

7“ reel

1 / 7

S-S5094

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.0,16-May-23

12 3 4 5 6 7

中文翻译

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