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2N7002KDW-TP PDF预览

2N7002KDW-TP

更新时间: 2024-11-18 21:02:43
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 428K
描述
Small Signal Field-Effect Transistor,

2N7002KDW-TP 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.55湿度敏感等级:1
峰值回流温度(摄氏度):260处于峰值回流温度下的最长时间:10
Base Number Matches:1

2N7002KDW-TP 数据手册

 浏览型号2N7002KDW-TP的Datasheet PDF文件第2页浏览型号2N7002KDW-TP的Datasheet PDF文件第3页 
M C C  
R
Micro Commercial Components  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
2N7002KDW  
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$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
·
High density cell design for Low RDS(ON)  
Voltage controlled small signal switch  
Rugged and reliable  
High saturation current capability  
ESD protected up to 2KV  
Epoxy meets UL 94 V-0 flammability rating  
N-Channel  
Enhancement Mode  
Field Effect Transistor  
·
·
Moisture Sensitivity Level 1  
Halogen free available upon request by adding suffix "-HF"  
SOT-363  
Mechanical Data  
G
Case: SOT-363, Molded Plastic  
Terminals: Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Marking: 72K  
C
B
A
H
Maximum Ratings  
M
Operating Temperature: -55°C to +150°C  
K
J
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 833oC/W Junction To Ambient  
D
L
Parameter  
Symbol  
Value  
Unit  
DIMENSIONS  
Drain-Source-Voltage  
VDSS  
VGS  
60  
V
V
INCHES  
MM  
DIM  
A
MIN  
.006  
.045  
.085  
MAX  
.014  
.053  
.096  
MIN  
0.15  
1.15  
2.15  
MAX  
0.35  
1.35  
2.45  
NOTE  
Gate-Source-Voltage  
±20  
B
C
D
G
H
J
.026  
0.65Nominal  
ID  
Drain Current  
340  
150  
mA  
.047  
.071  
---  
.055  
.087  
.004  
.043  
.018  
.006  
1.20  
1.80  
---  
1.40  
2.20  
0.10  
1.10  
0.46  
0.15  
PD  
mW  
Total Power Dissipation  
K
.031  
.010  
.003  
0.80  
0.26  
0.08  
L
M
Equivalent circuit  
www.mccsemi.com  
1of 3  
Revision: C  
2017/05/10  

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