Datasheet > 2N7002KDW_15

2N7002KDW_15

更新时间： 2024-11-19 02:57:39

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
2页	426K
描述
Dual N-Channel Small Signal MOSFET

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中文翻译

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2N7002KDW_15 数据手册

2N7002KDW

115mA, 60V

Dual N-Channel Small Signal MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A Suffix of “-C” specifies halogen & lead-free

SOT-363

FEATURES

 Low on-resistance

 Fast switching Speed

 Low-voltage drive

 Easily designed drive circuits

 ESD protected:2000V

MECHANICAL DATA

 Case: SOT-363

D₂

G₁

S₁

D G

 Case Material-UL flammability rating 94V-0

 Terminals: Solderable per MIL-STD-202,

Method 208

Millimeter

Min. Max.

Millimeter

REF.

Min.

Max.

0.100 REF.

0.525 REF.

2.00

2.15

1.15

0.90

2.20

2.45

1.35

1.10

 Weight: 0.006 grams(approx.)

0.08

0.15

S₂

G₂

D₁

8°

0.650 TYP.

1.20

0.15

1.40

0.35

DEVICE MARKING: RK

MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

PARAMETER

Drain – Source Voltage

SYMBOL

RATING

UNIT

V_DS

V_GS

I_D

Gate – Source Voltage

±20

Continuous Drain Current

Pulsed Drain Current

115

°C

I_DP

800

Continuous Reverse Drain Current

Pulsed Reverse Drain Current

Power Dissipation

I_D

115

I_DRP

800

P_D

225

Operating Junction & Storage Temperature Range

Note:

T_J, T_STG

-55~150

1. Pw≦10μS, Duty cycle≦1%

2. When mounted on a 1x0.75x0.062 inch glass epoxy board

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

TEST CONDITION

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

V_(BR)DSS

I_DSS

V_GS=0V, I_D=10μA

V_DS=60V, V_GS=0V

V_DS=0V , V_GS=±20V

1.0

±10

μA

I_GSS

ON CHARACTERISTICS

Gate-Threshold Voltage

V_GS(TH)

R_DS(ON)

g_FS

1.85

2.5

7.5

Ω

V_DS= V_GS,I_D=250μA

V_GS=10V, I_D=0.5A

Static Drain-Source On Resistance

Forward Transfer Admittance

V_GS=5V, I_D=0.05A

V_DS=10V, I_D=0.2A

DYNAMIC CHARACTERISTICS

Input Capacitance

C_ISS

C_OSS

C_RSS

V_DS=25V

V_GS=0V

f=1MHz

Output Capacitance

Reverse Transfer Capacitance

3.0

SWITCHING CHARACTERISTICS

Turn-on Delay Time

Turn-off Delay Time

T_d(ON)

V_DD=30V, I _D=0.2A

T_d(OFF)

R_L=150Ω, V _Gs=10V, R_G=10Ω

* Pw≦300μS, Duty cycle≦1%

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

31-Dec-2009 Rev. A

Page 1 of 2

中文翻译

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与2N7002KDW_15相关器件

型号	品牌	获取价格	描述	数据表
2N7002KDWA-TP-HF	MCC	获取价格	暂无描述
2N7002KDW-AU	PANJIT	获取价格	60V N-Channel Enhancement Mode MOSFET - ESD Protected
2N7002KDWBQ	MCC	获取价格	Tape: 3K/Reel, 120K/Ctn.;
2N7002KDW-G	SUPERTEX	获取价格	Small Signal Field-Effect Transistor,
2N7002KDWHQ	YANGJIE	获取价格	SOT-323
2N7002KDWS	SUPERTEX	获取价格	暂无描述
2N7002KDW-TP	MCC	获取价格	Small Signal Field-Effect Transistor,
2N7002KDW-TP-HF	MCC	获取价格	Small Signal Field-Effect Transistor,
2N7002KDW-TPQ2	MCC	获取价格	Tape: 3K/Reel, 120K/Ctn.;
2N7002KE	KEC	获取价格	N Channel MOSFET

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