Datasheet > 2N7002DWS

2N7002DWS

更新时间： 2023-12-06 20:02:50

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美台 - DIODES		/
页数	文件大小	规格书
7页	508K
描述
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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2N7002DWS 数据手册

2N7002DWS

0.5

0.4

0.3

0.2

0.1

0.0

0.5

0.4

0.3

0.2

0.1

V_GS= 3.5V

V_GS= 4.0V

V_DS= 5V

V_GS= 3.0V

V_GS= 4.5V

V_GS= 5.0V

V_GS= 2.8V

T_J= 125℃

T_J= 85℃

V_GS= 10.0V

T_J= 150℃

T_J= 25℃

T_J= -55℃

V_GS= 2.5V

1.5

2.5

3.5

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

V_GS= 5V

V_GS= 10V

I_D= 500mA

0.1

0.2

0.3

0.4

0.5

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 4. Typical Transfer Characteristic

I_D, DRAIN-SOURCE CURRENT (A)

Figure 3. Typical On-Resistance vs. Drain Current and

Gate Voltage

1.8

1.6

1.4

1.2

V_GS= 10V

T_J= 125℃

T_J= 150℃

V_GS= 5V, I_D= 200mA

V_GS= 10V, I_D= 500mA

T_J= 85℃

V_GS= 4V, I_D= 200mA

T_J= -55℃

T_J= 25℃

0.8

0.6

0.1

0.2

0.3

0.4

0.5

-50

-25

100 125 150

I_D, DRAIN CURRENT (A)

T_J, JUNCTION TEMPERATURE (℃)

Figure 6. On-Resistance Variation with Junction

Temperature

Figure 5. Typical On-Resistance vs. Drain Current and

Junction Temperature

3 of 7

www.diodes.com

October 2019

2N7002DWS

Document number: DS41208 Rev. 4 - 2

1 234 5 6 7

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