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2N7002DWQ-7-F PDF预览

2N7002DWQ-7-F

更新时间: 2024-01-21 00:06:11
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
5页 388K
描述
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6

2N7002DWQ-7-F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:16 weeks风险等级:1.5
其他特性:HIGH RELIABILITY配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):0.23 A
最大漏极电流 (ID):0.23 A最大漏源导通电阻:7.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):5 pF
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.4 W参考标准:AEC-Q101
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2N7002DWQ-7-F 数据手册

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2N7002DW  
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Copyright © 2017, Diodes Incorporated  
www.diodes.com  
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December 2017  
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2N7002DW  
Document number: DS30120 Rev. 17 - 2  

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