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2N7002DWQ-7-F PDF预览

2N7002DWQ-7-F

更新时间： 2024-02-06 09:22:49
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
5页 388K
描述
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6

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2N7002DWQ-7-F 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：16 weeks风险等级：1.5
其他特性：HIGH RELIABILITY配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (Abs) (ID)：0.23 A
最大漏极电流 (ID)：0.23 A最大漏源导通电阻：7.5 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：5 pF
JESD-30 代码：R-PDSO-G6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：0.4 W参考标准：AEC-Q101
子类别：FET General Purpose Power表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

2N7002DWQ-7-F 数据手册

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2N7002DW  
Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
60  
Unit  
V
60  
V
Drain-Gate Voltage RGS 1.0M  
VDGR  
VGSS  
Continuous  
±20  
±40  
V
Gate-Source Voltage  
Pulsed  
V
VGSS  
TA = +25C  
TA = +70C  
TA = +100C  
0.23  
0.18  
0.14  
Steady  
State  
A
Continuous Drain Current (Note 8) VGS = 5V  
ID  
Maximum Continuous Body Diode Forward Current (Note 8)  
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)  
0.53  
0.8  
A
A
IS  
IDM  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Value  
0.31  
0.2  
Unit  
W
TA = +25°C  
TA = +70°C  
Total Power Dissipation (Note 7)  
PD  
0.12  
410  
0.4  
TA = +100°C  
Steady State  
Thermal Resistance, Junction to Ambient (Note 7)  
Total Power Dissipation (Note 8)  
°C/W  
W
R  
JA  
TA = +25°C  
TA = +70°C  
TA = +100°C  
Steady State  
0.25  
0.15  
318  
135  
PD  
Thermal Resistance, Junction to Ambient (Note 8)  
Thermal Resistance, Junction to Case (Note 8)  
Operating and Storage Temperature Range  
°C/W  
°C /W  
°C  
R  
JA  
Steady State  
R  
JC  
-55 to +150  
TJ, TSTG  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS (Note 9)  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
60  
70  
V
BVDSS  
IDSS  
1.0  
500  
VGS = 0V, ID = 10µA  
VDS = 60V, VGS = 0V  
VGS = ±20V, VDS = 0V  
@ TC = +25°C  
@ TC = +125°C  
µA  
nA  
Gate-Body Leakage  
±10  
IGSS  
ON CHARACTERISTICS (Note 9)  
Gate Threshold Voltage  
1.0  
2.0  
V
3.2  
4.4  
VGS(TH)  
RDS(ON)  
ID(ON)  
gFS  
VDS = VGS, ID = 250µA  
VGS = 5.0V, ID = 0.05A  
VGS = 10V, ID = 0.5A  
VGS = 10V, VDS = 7.5V  
VDS =10V, ID = 0.2A  
VGS = 0V, IS = 115mA  
Static Drain-Source On-Resistance  
@ TJ = +25°C  
@ TJ = +125°C  
7.5  
13.5  
On-State Drain Current  
0.5  
80  
1.0  
0.78  
A
mS  
V
1.5  
Forward Transconductance  
Diode Forward Voltage  
VSD  
DYNAMIC CHARACTERISTICS (Note 10)  
Input Capacitance  
22  
11  
50  
25  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
VDS = 25V, VGS = 0V  
f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS (Note 10)  
Turn-On Delay Time  
2.0  
5.0  
7.0  
20  
20  
tD(ON)  
VDD = 30V, ID = 0.2A,  
RL = 150, VGEN = 10V,  
RGEN = 25  
ns  
Turn-Off Delay Time  
11.0  
  
tD(OFF)  
Notes:  
7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.  
8. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.  
9. Short duration pulse test used to minimize self-heating effect.  
10. Guaranteed by design. Not subject to product testing.  
2 of 5  
www.diodes.com  
December 2017  
© Diodes Incorporated  
2N7002DW  
Document number: DS30120 Rev. 17 - 2  
12345

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