Datasheet > 2N6800_01

2N6800_01

更新时间： 2024-11-21 07:29:11

品牌	Logo	应用领域
SEME-LAB		/
页数	文件大小	规格书
2页	53K
描述
N–CHANNEL ENHANCE-MENT POWER MOSFET

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中文翻译

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数据手册

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2N6800_01 数据手册

2N6800

MECHANICAL DATA

Dimensions in mm (inches)

N–CHANNEL ENHANCE-

8.64 (0.34)

9.40 (0.37)

MENT

8.01 (0.315)

9.01 (0.355)

POWER MOSFET

4.06 (0.16)

4.57 (0.18)

BV_DSS400V

0.89

(0.035)

max.

12.70

(0.500)

min.

I_D

3.0A

0.41 (0.016)

0.53 (0.021)

dia.

Ω

R_DS(on)1.0

5.08 (0.200)

typ.

FEATURES

2.54

(0.100)

• AVALANCHE ENERGY RATED

• HERMETICALLY SEALED

• DYNAMIC dv/dt RATING

0.74 (0.029)

1.14 (0.045)

0.71 (0.028)

0.53 (0.021)

• SIMPLE DRIVE REQUIREMENTS

45°

TO39 – Package (TO205AF)

Pin 1 – Source

Pin 2 – Gate

Pin 3 – Drain

ABSOLUTE MAXIMUM RATINGS (T

= 25°C unless otherwise stated)

case

Gate – Source Voltage

Continuous Drain Current

20V

(V = 10V , T

= 25°C)

case

(V = 10V , T

= 100°C)

case

Pulsed Drain Current

12A

Power Dissipation @ T = 25°C

case

25W

Linear Derating Factor

0.20W/°C

4V/ns

dv/dt

T , T

Peak Diode Recovery

Operating and Storage Temperature Range

Thermal Resistance Junction to Case

Thermal Resistance Junction-to-Ambient

–55 to 150°C

5.0°C/W

175°C/W

stg

θJC

θJCA

Notes

1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%

2) @ V = 50V , L ≥ 0.100mH , R = 25Ω , Peak I = 1.5A , Starting T = 25°C

3) @ I ≤ 1.5A , di/dt ≤ 50A/µs , V ≤ BV

, T ≤ 150°C , SUGGESTED R = 7.5Ω

J G

DSS

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Document Number 3097

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

Issue 1

中文翻译

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与2N6800_01相关器件

型号	品牌	获取价格	描述	数据表
2N6800E	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi
2N6800EA	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi
2N6800EAPBF	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi
2N6800EB	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi
2N6800EC	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi
2N6800ECPBF	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi
2N6800EPBF	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi
2N6800LCC4	SEME-LAB	获取价格	N–CHANNEL ENHANCEMENT MODE
2N6800SCC5205/019PBF	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi
2N6800TX	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-o

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