型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N6804E3 | MICROSEMI | Power Field-Effect Transistor, 11A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Met |
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2N6804PBF | INFINEON | Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Meta |
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2N6804SCC5206/004 | INFINEON | Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se |
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2N6804SCC5206/004PBF | INFINEON | Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se |
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2N6806 | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 6.5A I(D) | TO-204AA |
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2N6806SCC5206/004 | INFINEON | Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se |
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