Datasheet > 2N6802

2N6802

更新时间： 2024-11-22 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	1124K
描述
500V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6802 with Hermetic Packaging

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2N6802 数据手册

PD-90433E

IRFF430

JANTX2N6802

JANTXV2N6802

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTORS

500V, N-CHANNEL

REF: MIL-PRF-19500/557

THRU-HOLE TO-205AF (TO-39)

Product Summary

Part Number

BVDSS

RDS(on)

I_D

IRFF430

500V

2.5A

1.5

TO-39

Description

Features

The HEXFET^®technology is the key to International

Rectifier’s HiRel advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on state

resistance combined with high trans conductance.

 Repetitive Avalanche Ratings

 Dynamic dv/dt Rating

 Hermetically Sealed

 Simple Drive Requirements

 ESD Rating: Class 1C per MIL-STD-750,

Method 1020

The HEXFET transistors also feature all of the well

established advantages of MOSFETs such as voltage

control, very fast switching and temperature stability of the

electrical parameters.

They are well suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio amplifiers

and high energy pulse circuits.

Absolute Maximum Ratings

Symbol

Value

Parameter

Units

I_D1@ V_GS= 10V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 10V, T_C= 100°C Continuous Drain Current

2.5

1.5

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

0.20

± 20

184

V_GS

E_AS

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

I_AR

E_AR

Avalanche Current 

2.5

3.5

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

dv/dt

T_J

Operating Junction and

Storage Temperature Range

Lead Temperature

Weight

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

0.98 (Typical)

For Footnotes, refer to the page 2.

2018-11-20

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7

中文翻译

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2N6802 替代型号

型号	品牌	替代类型	描述	数据表
JANTXV2N6802	INFINEON	完全替代	POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=1.5ohm, Id=2.5A)
JANTX2N6802	INFINEON	类似代替	POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=1.5ohm, Id=2.5A)
IRFF430	INFINEON	类似代替	HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

与2N6802相关器件

型号	品牌	获取价格	描述	数据表
2N6802SCC5205/019	INFINEON	获取价格	Power Field-Effect Transistor, 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
2N6802U	MICROSEMI	获取价格	N-CHANNEL MOSFET
2N6804	MICROSEMI	获取价格	P-CHANNEL MOSFET
2N6804_12	MAS	获取价格	This 2N6804 switching transistor is military qualified up to the JANTXV level for high-rel
2N6804E3	MICROSEMI	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.36ohm, 1-Element, P-Channel, Silicon, Met
2N6804PBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Meta
2N6804SCC5206/004	INFINEON	获取价格	Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se
2N6804SCC5206/004PBF	INFINEON	获取价格	Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se
2N6806	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 200V V(BR)DSS \| 6.5A I(D) \| TO-204AA
2N6806SCC5206/004	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se

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