Datasheet > 2N6800_01

2N6800_01

更新时间： 2022-09-16 15:49:13

品牌	Logo	应用领域
SEME-LAB		/
页数	文件大小	规格书
2页	53K
描述
N–CHANNEL ENHANCE-MENT POWER MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N6800_01 数据手册

2N6800

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise stated)

amb

Parameter

Test Conditions

Min.

Typ.

Max. Unit

STATIC ELECTRICAL RATINGS

Drain – Source Breakdown Voltage

Temperature Coefficient of

Breakdown Voltage

= 0

I = 1mA

400

DSS

∆BV

∆T

Reference to 25°C

DSS

0.37

V/°C

I = 1mA

Static Drain to Source

= 10V

I = 2A

Ω

DS(on)

On–State Resistance

I = 3A

1.15

Gate Threshold Voltage

Forward Transconductance

= V

I = 250µA

GS(th)

(Ω)

≥ 15V

= 2A

S(Ω

= 0.8xMax Rating

250

100

–100

Zero Gate Voltage Drain Current

µA

DSS

= 0

T = 125°C

Forward Gate – Source Leakage

Reverse Gate – Source Leakage

= 20V

= –20V

GSS

DYNAMIC CHARACTERISTICS

Input Capacitance

= 0

620

200

iss

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

= 25V

oss

rss

f = 1MHz

19.1

5.8

19.9

= 10V

I = 3A

Gate – Source Charge

Gate – Drain (“Miller”) Charge

Turn–On Delay Time

Rise Time

= Max Rating x 0.5

6.7

d(on)

= 200V

= 10V

Turn–Off Delay Time

Fall Time

I = 3A

R = 7.5Ω

d(off)

SOURCE – DRAIN DIODE CHARACTERISTICS

Continuous Source Current

Pulse Source Current

I = 3.0A

T = 25°C

Diode Forward Voltage

1.4

= 0

Reverse Recovery TimeReverse

Recovery Charge

I = 3.0A

T = 25°C

700

6.2

d / d ≤ 100A/µs V ≤ 50V

i t DD

Forward Turn–On Time

Negligible

µC

PACKAGE CHARACTERISTICS

Internal Drain Inductance (from centre of drain pad to die)

Internal Source Inductance (from centre of source pad to end of source bond wire)

Notes

1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.

Document Number 3097

Issue 1

E-mail: sales@semelab.co.uk

Website http://www.semelab.co.uk

下载PDF

与2N6800_01相关器件

型号	品牌	描述	获取价格	数据表
2N6800E	INFINEON	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi	获取价格
2N6800EA	INFINEON	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi	获取价格
2N6800EAPBF	INFINEON	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi	获取价格
2N6800EB	INFINEON	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi	获取价格
2N6800EC	INFINEON	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi	获取价格
2N6800ECPBF	INFINEON	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi	获取价格

与2N6800_01相关文章

PCF8591数据手册解读：参数、引脚说明
2024-05-11

4
一文带你了解ss8050参数、引脚配置、应用指南
2024-05-11

3
深入解析AD7606高性能多通道模数转换器：资料手册参数分析
2024-05-10

7
74HC573三态非易失锁存器(Latch)资料手册参数分析
2024-05-10

5

产品中心

服务支持

精选活动

关于我们

帮助中心

2N6800_01

2N6800_01 数据手册

与2N6800_01相关器件

与2N6800_01相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2N6800_01

2N6800_01 数据手册

与2N6800_01相关器件

与2N6800_01相关文章

您还可以找

您在本页遇到什么问题？