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2N6800E PDF预览

2N6800E

更新时间: 2024-11-22 04:59:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 325K
描述
Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

2N6800E 数据手册

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