生命周期: | Obsolete | 零件包装代码: | TO-3 |
包装说明: | FLANGE MOUNT, O-MBFM-P2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.3 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 16 A |
集电极-发射极最大电压: | 120 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 20 | JEDEC-95代码: | TO-204AA |
JESD-30 代码: | O-MBFM-P2 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 1 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5630E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 16A I(C), 120V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL | |
2N5630PBFREE | CENTRAL |
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Power Bipolar Transistor, | |
2N5631 | ONSEMI |
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POWER TRANSISTORS COMPLEMENTARY SILICON | |
2N5631 | NJSEMI |
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POWER TRANSISTORS COMPLEMENTARY SILICON | |
2N5631 | ASI |
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Transistor | |
2N5631 | FAIRCHILD |
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Transistor, | |
2N5631 | JMNIC |
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Silicon NPN Power Transistors | |
2N5631 | SAVANTIC |
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Silicon NPN Power Transistors | |
2N5631 | ISC |
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Silicon NPN Power Transistors | |
2N5631/D | ONSEMI |
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High-Voltage High-Power Transistors |