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2N5632 PDF预览

2N5632

更新时间: 2024-11-05 06:15:55
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 118K
描述
Silicon NPN Power Transistors

2N5632 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.55
Base Number Matches:1

2N5632 数据手册

 浏览型号2N5632的Datasheet PDF文件第2页浏览型号2N5632的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N5632 2N5633 2N5634  
DESCRIPTION  
·With TO-3 package  
·Low collector saturation voltage  
·High DC current gain  
APPLICATIONS  
·For general-purpose power amplifier  
and switching applications  
PINNING  
PIN  
DESCRIPTION  
1
Base  
2
3
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
Collector  
Absolute maximum ratings(Ta=)  
SYMBO
PARAMETER  
CONDITIONS  
VALUE  
100  
UNIT  
2N5632  
2N5633  
2N5634  
2N5632  
2N5633  
2N5634  
VCBO  
Collector-base voltage  
Open emitter  
V
120  
140  
100  
VCEO  
Collector-emitter voltage  
Open base  
Open collector  
TC=25  
V
120  
140  
VEBO  
IC  
Emitter-base voltage  
Collector current  
7
V
A
10  
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
150  
W
150  
Tstg  
-65~200  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
1.1  
/W  

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